5962-8959820MZA QP SEMICONDUCTOR, 5962-8959820MZA Datasheet - Page 39

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5962-8959820MZA

Manufacturer Part Number
5962-8959820MZA
Description
Manufacturer
QP SEMICONDUCTOR
Datasheet

Specifications of 5962-8959820MZA

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DSCC FORM 2234
APR 97
PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535
permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-
PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in
method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-
PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1005 of MIL-STD-883.
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-
4.4.1 Group A inspection.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test
4.4.2
a.
b.
c.
d.
e.
a.
b.
c.
DEFENSE SUPPLY CENTER COLUMBUS
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
Subgroup 4 (C IN and C OUT measurements) shall be measured only for initial qualification and after any process or
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
Tests shall be as specified in table IIA herein.
Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
subgroups 7 and 8 shall include verifying the functionality of the device.
design changes which may affect input or output capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is 15 devices with no failures, and all input and
output terminals tested.
Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
T
O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which
may affect the performance of the device. For device class M, procedures and circuits shall be maintained under
document revision level control by the manufacturer and shall be made available to the preparing activity or acquiring
activity upon request. For device classes Q and V, the procedures and circuits shall be under the control of the
device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the preparing activity
or acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-up test shall
be considered destructive. Information contained in JEDEC Standard EIA/JESD 78 may be used for reference.
A
= +125°C, minimum.
MICROCIRCUIT DRAWING
Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA
herein.
COLUMBUS, OHIO 43218-3990
STANDARD
SIZE
A
REVISION LEVEL
R
SHEET
5962-89598
39

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