EV2A08AVNYU35 E2V, EV2A08AVNYU35 Datasheet - Page 6

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EV2A08AVNYU35

Manufacturer Part Number
EV2A08AVNYU35
Description
Manufacturer
E2V
Datasheet

Specifications of EV2A08AVNYU35

Lead Free Status / RoHS Status
Supplier Unconfirmed
6
1024B–HIREL–10/10
EV2A08A
Table 2-4.
Note:
Table 2-5.
Note:
Table 2-6.
Parameter
AC active supply current-read modes
(I
AC active supply current-write modes
(V
EV2A08AV (Industrial)
EV2A08AM (Military)
AC standby current
(V
no other restrictions on other inputs
CMOS standby current
(E ≥ V
(V
Parameter
Address input capacitance
Control input capacitance
Input/Output capacitance
Parameter
Logic input timing measurement reference level
Logic output timing measurement reference level
Logic input pulse levels
Input rise/fall time
Output load for low and high impedance parameters
Output load for all other timing parameters
OUT
DD
DD
DD
= max)
= max, E = V
= max, f = 0 MHz)
= 0mA, V
DD
1. All active current measurements are measured with one address transition per cycle and at minimum
1. f = 1.0 MHz, dV = 3.0 V, T
– 0.2V and V
cycle time.
DD
Power Supply Characteristics
Capacitance
AC Measurement Conditions
= max)
IH
)
In
≤ V
SS
(1)
+ 0.2V or ≥ V
A
(1)
(1)
= 25 °C, periodically sampled rather than 100% tested.
DD
– 0.2V)
Symbol
Symbol
I
I
I
I
DDW
C
DDR
SB1
SB2
C
C
I/O
In
In
Value
1.5
1.5
0 or 3.0
2
See
See
Figure 2-2 on page 7
Figure 2-3 on page 7
Typical
Typical
30
50
50
13
8
e2v semiconductors SAS 2010
Max
Max
135
135
66
20
10
V
V
6
6
8
Unit
V
ns
Unit
Unit
mA
mA
mA
mA
pF
pF
pF

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