KHX1866C9S3K2/4GX KINGSTON TECHNOLOGY, KHX1866C9S3K2/4GX Datasheet

KHX1866C9S3K2/4GX

Manufacturer Part Number

KHX1866C9S3K2/4GX

Description

Manufacturer

KINGSTON TECHNOLOGY

Datasheet

1.KHX1866C9S3K24GX.pdf (2 pages)

Specifications of KHX1866C9S3K2/4GX

Main Category

DRAM Module

Sub-category

DDR3 SDRAM

Module Type

204SODIMM

Device Core Size

64b

Organization

256Mx64x2

Total Density

4GByte

Chip Density

1Gb

Maximum Clock Rate

1.866GHz

Operating Supply Voltage (typ)

1.5V

Number Of Elements

Operating Supply Voltage (max)

1.575V

Operating Supply Voltage (min)

1.425V

Operating Temp Range

0C to 85C

Operating Temperature Classification

Commercial

Pin Count

204

Mounting

Socket

Lead Free Status / RoHS Status

Supplier Unconfirmed

Current page: 1 of 2
Download datasheet (365Kb)

Document No. 4805616-001.A00

DESCRIPTION:

Kingston's KHX1866C9S3K2/4GX is a kit of two 256M x 64-bit (2GB) DDR3-1866MHz CL9 SDRAM (Synchronous

DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. Total kit capacity is

4GB. Each module kit has been tested to run at DDR3-1866MHz at a low latency timing of 9-9-9-27-2T at 1.5V. The

SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9-9 at 1.5V. Each 204-pin SODIMM

uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as

follows:

FEATURES:

PERFORMANCE:

JEDEC standard 1.5V ± 0.075V Power Supply

VDDQ = 1.5V ± 0.075V

667MHz fCK for 1333Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 5,6,7,8,9,10

Posted CAS

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7(DDR3-1333)

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4

which does not allow seamless read or write [either on the fly using A12 or MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

Asynchronous Reset

PCB : Height 1.180” (30.00mm), double sided component

CL(IDD)

Row Cycle Time (tRCmin)

Refresh to Active/Refresh Command Time (tRFCmin)

Row Active Time (tRASmin)

Power

UL Rating

Operating Temperature

Storage Temperature

T E C H N O L O G Y

4GB (2GB 256M x 64-Bit x 2 pcs.) DDR3-1866MHz

KHX1866C9S3K2/4GX

CL9 204-Pin SODIMM Kit

05/27/10

9 cycles

49.5ns (min.)

110ns

36ns (min.)

1.125 W (operating per module)

94 V - 0

-55

C to 85

C to +100

Page 1

Related parts for KHX1866C9S3K2/4GX

KHX1866C9S3K2/4GX Summary of contents

Page 1

... DDR3-1866MHz DESCRIPTION: Kingston's KHX1866C9S3K2/4GX is a kit of two 256M x 64-bit (2GB) DDR3-1866MHz CL9 SDRAM (Synchronous DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. Total kit capacity is 4GB. Each module kit has been tested to run at DDR3-1866MHz at a low latency timing of 9-9-9-27-2T at 1.5V. The SPDs are programmed to JEDEC standard latency DDR3-1333MHz timing of 9-9 ...

Page 2

... MODULE DIMENSIONS: w/ Heatsink Assembly Document No. 4805616-001.A00 68.1 ValueRAM Page 2 ...

Related keywords

KHX1866C9S3K2/4GX datasheet
KHX1866C9S3K2/4GX data sheet
KHX1866C9S3K2/4GX pdf datasheet
KHX1866C9S3K2/4GX component
KHX1866C9S3K2/4GX part
KHX1866C9S3K2/4GX distributor
KHX1866C9S3K2/4GX RoHS
KHX1866C9S3K2/4GX datasheet download