M25P40-VMW6GB NUMONYX, M25P40-VMW6GB Datasheet - Page 60

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M25P40-VMW6GB

Manufacturer Part Number
M25P40-VMW6GB
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M25P40-VMW6GB

Cell Type
NOR
Density
4Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
SO W
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Compliant
Table 31.
60/61
14-April-2010
14-May-2009
18-February-
23-Feb-2010
2009
Date
Document revision history (continued)
Revision
17
18
19
20
Revised the following:
– Table 8: Vwi Min (Grade 3) = 1V vs. 2.1V or (remove one row & Grade indication)
– Table 11: Erase/Program cycles = 100000 cycles also for Grade 3 (instead of
– Table 13: Icc3 Operating Current (READ) ' change on section Test Condition
– Table 14: Icc3 Operating Current (READ) ' change on section Test Condition
– Table 15: this is valid also for grade 3:
– Table 16: this is valid also for grade 3:
– Table 17: with last 2 previous modifications it is possible to remove it
– Table 19: Insert in heading:” identified with device belonging to X technology
Revised cross references in
Added the following package information:
Corrected package nomenclature.
10000)
OLD: C = 0.1VCC / 0.9.VCC at 40 MHz and 75 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 40 MHz, 50 MHz and 75 MHz, Q = open
OLD: C = 0.1VCC / 0.9.VCC at 25 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 25 MHz and 33 MHz, Q = open
OLD: C = 0.1VCC / 0.9.VCC at 25 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 25 MHz and 75 MHz, Q = open
OLD: C = 0.1VCC / 0.9.VCC at 20 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 20 MHz and 33 MHz, Q = open
OLD: Instruction times, process technology 110 nm (device grade 6)
NEW: Instruction times, process technology 110 nm
OLD: Instruction times, process technology 150 nm (device grade 6)
NEW: Instruction times, process technology 150 nm
version;” Change tRES1 = 30 us & tRES2 = 30us (remove 3 us & 1.8 us & note 5)
Figure 30.: UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead,
4 x 3 mm package mechanical data
Figure 31.: UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead,
2 x 3 mm package outline
Table 11.: Device grade and AC table
Changes
correlation.

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