MT47H16M16BG-5E IT:B Micron Technology Inc, MT47H16M16BG-5E IT:B Datasheet - Page 100

• Manufacturer Part Number: MT47H16M16BG-5E IT:B
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H16M16BG-5E IT:B

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 600ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 56: Write Burst
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
100
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
256Mb: x4, x8, x16 DDR2 SDRAM
Transitioning Data
T2n
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
©2003 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE