STK22C48-NF25 Cypress Semiconductor Corp, STK22C48-NF25 Datasheet - Page 10

• Manufacturer Part Number: STK22C48-NF25
• Description: STK22C48-NF25
• Manufacturer: Cypress Semiconductor Corp

Specifications of STK22C48-NF25

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16K (2K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 001-51000 Rev. *D
SRAM Write Cycle
t
t
t
t
t
t
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t
t
10. Measured ±200 mV from steady state output voltage.
11. If WE is Low when CE goes Low, the outputs remain in the high impedance state.
12. HSB must be high during SRAM Write cycles.
13. CE or WE must be greater than V
WC
PWE
SCE
SD
HD
AW
SA
HA
HZWE
LZWE
Parameter
Cypress
[10]
[10, 11]
ADDRESS
DATA OUT
ADDRESS
DATA OUT
DATA IN
DATA IN
WE
CE
CE
WE
Parameter
t
t
t
t
t
t
t
t
t
t
AVAV
WLWH,
ELWH,
DVWH,
WHDX,
AVWH,
AVWL,
WHAX,
WLQZ
WHQX
t
t
t
t
t
t
t
ELEH
AVEL
AVEH
EHAX
WLEH
DVEH
EHDX
Alt
IH
during address transitions.
PREVIOUS DATA
t
SA
Figure 10. SRAM Write Cycle 2: CE Controlled
Figure 9. SRAM Write Cycle 1: WE Controlled
t
SA
Write cycle time
Write pulse width
Chip enable to end of write
Data setup to end of write
Data hold after end of write
Address setup to end of write
Address setup to start of write
Address hold after end of write
Write enable to output disable
Output active after end of write
Description
HIGH IMPEDANCE
t
t
AW
PWE
t
AW
t
HZWE
t
t
t
SCE
WC
SCE
t
WC
t
t
SD
HIGH IMPEDANCE
PWE
DATA VALID
DATA VALID
t
SD
Min
[12, 13]
[12, 13]
25
20
20
10
20
t
0
0
0
–
5
HA
t
t
t
HD
25 ns
HD
HA
Max
10
t
–
–
–
–
–
–
–
–
–
LZWE
Min
45
30
30
15
30
0
0
0
–
5
45 ns
STK22C48
Max
14
Page 10 of 17
–
–
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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