DMMT5551-7-F Diodes Zetex, DMMT5551-7-F Datasheet - Page 2

• Manufacturer Part Number: DMMT5551-7-F
• Description: Trans GP BJT NPN 160V 0.2A 6-Pin SOT-26 T/R
• Manufacturer: Diodes Zetex
• Type: NPNr

Specifications of DMMT5551-7-F

• Package: 6SOT-26
• Supplier Package: SOT-26
• Pin Count: 6
• Minimum Dc Current Gain: 80@1mA@5V|80@10mA@5V|30@50mA@5V
• Maximum Operating Frequency: 300 MHz
• Maximum Dc Collector Current: 0.2 A
• Maximum Base Emitter Saturation Voltage: 1@1mA@10mA|1@5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.15@1mA@10mA|0.2@5mA@50mA V
• Maximum Collector Base Voltage: 180 V
• Maximum Collector Emitter Voltage: 160 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
DS30436 Rev. 8 - 2
300
250
200
150
350
100
400
50
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
0
0
V
BE(SAT)
25
T , AMBIENT TEMPERATURE (°C)
are matched with typical matched tolerances of 1% and maximum of 2%.
Fig. 1, Max Power Dissipation vs.
A
Characteristic
50
Ambient Temperature
75
FE
100 125
, (matched at I
@T
A
= 25°C unless otherwise specified
150
C
= 10mA and V
175
200
CE
www.diodes.com
V
V
V
V
Symbol
V
= 5V) Collector Emitter Saturation Voltage, V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
h
CBO
EBO
NF
f
obo
FE
FE
T
2 of 4
Min
180
160
100
6.0
80
80
30
50
⎯
⎯
⎯
⎯
⎯
⎯
0.14
0.12
0.09
0.08
0.05
0.15
0.13
0.07
0.06
0.04
0.11
0.10
1
Max
0.15
0.20
250
250
300
1.0
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
I
I
C
B
= 10
Fig. 2, Collector Emitter Saturation Voltage
I , COLLECTOR CURRENT (mA)
C
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
V
V
V
V
V
10
vs. Collector Current
CE(SAT)
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
C
C
C
T = 150°C
CB
CB
EB
CB
CE
CE
CE
S
A
= 10μA, I
= 10mA, I
= 10mA, I
= 100μA, I
= 1.0mA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
, and Base Emitter Saturation Voltage,
= 1.0kΩ, f = 1.0kHz
= 4.0V, I
= 10V, I
= 5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
T = -50°C
C
Test Condition
B
B
B
B
C
A
C
C
E
B
C
= 0
E
E
CE
CE
CE
100
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
= 10mA,
= 0
= 0
= 0
= 200μA,
DMMT5551/DMMT5551S
= 0
= 0, T
= 5.0V
= 5.0V
= 5.0V
A
T = 25°C
A
= 100°C
© Diodes Incorporated
E
= 0
1,000