BTA412Y-800B,127 NXP Semiconductors, BTA412Y-800B,127 Datasheet - Page 4

• Manufacturer Part Number: BTA412Y-800B,127
• Description: TRIAC 800V 12A TO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BTA412Y-800B,127

• Package / Case: SOT78D (TO-220)
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 60mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 140A, 153A
• Current - On State (it (rms) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Standard
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 153 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061313127::BTA412Y-800B::BTA412Y-800B

NXP Semiconductors
BTA412Y_SER_B_C_2
Product data sheet
Fig 3.
Fig 4.
I
T(RMS)
I
(A)
TSM
(A)
(1) dI
10
10
10
40
30
20
10
3
2
0
10
10
t
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
duration; maximum values
p
-5
-2
mb
T
/dt limit
20 ms
= 116 C
10
(1)
-1
10
-4
1
surge duration (s)
12 A 3-quadrant triacs, insulated, high commutation, high temperature
003aab813
10
Rev. 02 — 11 March 2008
10
-3
Fig 5.
BTA412Y series B and C
I
T(RMS)
(A)
15
10
5
0
-50
RMS on-state current as a function of
mounting base temperature; maximum values
0
10
-2
50
I
T
T
j(init)
= 25 C max
t
p
100
t
p
© NXP B.V. 2008. All rights reserved.
(s)
T
003aab812
003aab814
I
TSM
mb
t
( C)
10
150
-1
4 of 12