BTA2008-800E,412 NXP Semiconductors, BTA2008-800E,412 Datasheet - Page 3

• Manufacturer Part Number: BTA2008-800E,412
• Description: TRIAC 800V 80MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BTA2008-800E,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 12mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Current - On State (it (rms)) (max): 800mA
• Voltage - Gate Trigger (vgt) (max): 2V
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 9.9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.35 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061105412; BTA2008-800E; BTA2008-800E

NXP Semiconductors
BTA2008_SER_D_E_1
Product data sheet
Fig 1.
Fig 2.
P
(W)
I
(A)
TSM
tot
1.0
0.8
0.6
0.4
0.2
0.0
12
8
4
0
1
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
= conduction angle
conduction
(degrees)
angle
120
180
30
60
90
0.1
factor
form
1.57
2.8
2.2
1.9
a
4
0.2
0.3
10
Rev. 01 — 18 January 2008
0.4
0.5
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
10
0.6
2
0.7
number of cycles
I
T
T
j(init)
0.8
1/f
= 25 C max
© NXP B.V. 2008. All rights reserved.
I
T(RMS)
= 180
003aac118
003aac116
120
90
60
30
I
TSM
(A)
t
10
0.9
3
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