MLD1N06CLT4G ON Semiconductor, MLD1N06CLT4G Datasheet - Page 4

• Manufacturer Part Number: MLD1N06CLT4G
• Description: IC MOSFET POWER N-CH 1A 62V DPAK
• Manufacturer: ON Semiconductor
• Series: SMARTDISCRETES™r

Specifications of MLD1N06CLT4G

• Transistor Type: NPN, N-Channel Gate-Drain, Source Clamp
• Voltage - Rated: 62V
• Current Rating: 1A
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MLD1N06CLT4GOS; MLD1N06CLT4GOS; MLD1N06CLT4GOSTR

100
4
3
2
1
0
80
60
40
20
-50
0
25
Figure 6. Single Pulse Avalanche Energy
versus Junction Temperature
50
0
T
T
Figure 3. I
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
With Temperature
75
D(lim)
50
1.25
0.75
0.25
Variation
0.5
100
1
-50
Figure 5. On−Resistance Variation With
100
125
V
V
GS
DS
= 5 V
= 7.5 V
T
0
http://onsemi.com
J
, JUNCTION TEMPERATURE (°C)
Temperature
150
150
V
4
GS
= 4 V
50
64
63
62
61
60
4
3
2
1
0
-50
0
V
GS
= 5 V
100
Voltage Variation With Temperature
Figure 7. Drain−Source Sustaining
V
Figure 4. R
2
GS
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
Gate−To−Source Voltage
T
0
= 1 A
J
, JUNCTION TEMPERATURE (°C)
150
4
DS(on)
50
25°C
Variation With
6
T
J
= -50°C
100
8
I
D
150°C
= 1 A
150
10