BCV 61A E6327 Infineon Technologies, BCV 61A E6327 Datasheet - Page 2

• Manufacturer Part Number: BCV 61A E6327
• Description: TRANSISTOR NPN DBL 30V SOT143-4
• Manufacturer: Infineon Technologies

Specifications of BCV 61A E6327

• Transistor Type: 2 NPN, Base Collector Junction
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000010885

Thermal Resistance
Electrical Characteristics at T
Junction - soldering point
Parameter
DC Characteristics of T1
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain
I
DC current gain
I
Collector-emitter saturation voltage
I
I
Base-emitter saturation voltage
I
I
Base-emitter voltage
I
I
1 For calculation of R
2 Puls test: t
C
C
E
C
C
C
C
C
C
C
C
CB
CB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 0.1 mA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 30 V, I
= 30 V, I
300 µs, D = 2%
C
E
CE
CE
B
B
B
E
E
CE
= 0
= 0
B
B
CE
= 0
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
2)
2)
= 5 V
= 5 V
= 5 mA
= 5 mA
= 5 V
thJA please refer to Application Note Thermal Resistance
= 5 V
2)
A
= 150 °C
1)
2)
A
= 25°C, unless otherwise specified
2)
BCV61A
BCV61B
BCV61C
2
R
Symbol
V
V
V
I
I
h
h
V
V
V
CBO
CBO
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
thJS
min.
110
200
420
580
100
30
30
6
-
-
-
-
-
-
-
Values
180
290
520
200
700
900
660
typ.
170
90
-
-
-
-
-
-
-
max.
220
450
800
250
600
700
770
15
2007-08-09
5
-
-
-
-
-
-
BCV61
K/W
Unit
V
nA
µA
-
mV