DMB53D0UV-7 Diodes Inc, DMB53D0UV-7 Datasheet - Page 2

• Manufacturer Part Number: DMB53D0UV-7
• Description: MOSFET NMOS+NPN TRANS SOT-563
• Manufacturer: Diodes Inc

Specifications of DMB53D0UV-7

• Transistor Type: NPN, N-Channel
• Applications: General Purpose
• Voltage - Rated: 45V NPN, 50V N-Channel
• Current Rating: 100mA PNP, 160mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMB53D0UVDITR

Electrical Characteristics - MOSFET
Electrical Characteristics - NPN Transistor
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Collector-Emitter Cut-Off Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
DMB53D0UV
Document number: DS31651 Rev. 6 - 2
4. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
V
V
V
V
Symbol
R
Symbol
V
@T
BV
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
DS (ON)
I
C
I
I
I
I
C
V
GS(th)
C
h
g
CBO
CBO
NF
DSS
GSS
CES
OBO
f
FE
FS
oss
BE
DSS
iss
rss
T
A
= 25°C unless otherwise specified
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@T
2 of 7
Min
Min
180
200
580
100
0.7
A
50
45
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
—
—
—
—
—
6
= 25°C unless otherwise specified
Typ
Typ
290
700
900
660
0.8
3.1
2.1
25
⎯
⎯
⎯
⎯
—
—
—
—
—
—
—
—
—
—
4
5
Max
Max
450
100
300
700
770
100
1.0
1.0
5.0
4.5
5.0
⎯
10
⎯
⎯
⎯
⎯
—
—
—
—
15
—
10
4
5
MHz
Unit
Unit
mS
mV
mV
mV
μA
μA
nA
µA
nA
dB
pF
pF
pF
pF
—
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0KHz
V
f = 1.0MHz
I
I
I
V
I
I
I
I
V
V
V
V
V
V
f = 100MHz
V
V
f = 1.0kHz, BW = 200Hz
C
C
E
C
C
C
C
GS
DS
GS
GS
DS
GS
GS
DS
DS
CE
CE
CE
CB
CB
CE
CE
CB
CE
= 1μA, I
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 50V, V
= 10V, I
= V
= 10V, V
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 30V
= 30V, T
= 45V
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, R
= 0V, I
= ±8V, V
= ±12V, V
= 4V, I
= 2.5V, I
GS
Test Condition
Test Condition
DMB53D0UV
C
, I
D
D
B
D
B
= 0
B
B
S
D
= 250μA
GS
= 100mA
D
C
C
C
A
C
GS
DS
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0kΩ,
= 250μA
= 100mA,
DS
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 80mA
= 5.0mA
= 5.0mA
© Diodes Incorporated
= 0V
= 0V
= 0V,
December 2009
= 0V