LMN400B01-7 Diodes Inc, LMN400B01-7 Datasheet - Page 6

• Manufacturer Part Number: LMN400B01-7
• Description: MCU LOAD SWITCH 400MA SOT-26
• Manufacturer: Diodes Inc

Specifications of LMN400B01-7

• Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
• Applications: Load Switch
• Voltage - Rated: 50V PNP, 60V N-Channel
• Current Rating: 400mA PNP, 115mA
• Mounting Type: Surface Mount
• Package / Case: SOT-26
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LMN400B01DITR

DS30699 Rev. 5 - 2
1.8
2.2
1.6
1.4
1.2
1.0
0.2
1.4
1.2
1.0
0.8
0.6
0.4
2
0
4
3
2
0
1
-75
0.001
0
V
GS
-50
T = 25°C
A
= 8V
Fig. 14 Static Drain-Source On-Resistance
V
Pulsed
T , JUNCTION TEMPERATURE (°C)
V
GS
J
DS
Fig. 12 Gate Threshold Voltage
1
-25
Fig. 10 Output Characteristics
= 10V
,
DRAIN-SOURCE VOLTAGE (V)
vs. Junction Temperature
I , DRAIN CURRENT (A)
D
T = 125°C
0
0.01
A
vs. Drain Current
V
2
GS
25
T = -55°C
= 10V
T = 25°C
A
Typical N-Channel MOSFET (Q2) Characteristics
A
T = 85°C
50
V
A
GS
V
GS
3
= 3V
75
T = 150°C
V
V
I = 0.25mA
Pulsed
= 4V
D
A
V
DS
DS
0.1
GS
V
100 125 150
= 10V
= V
GS
= 5V
4
= 6V
GS
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5
1
6 of 10
1.4
1.2
0.8
0.6
0.4
0.2
0
1
5
4
3
2
7
6
0
1
6
5
3
2
0
4
1
0.001
0
0
I = 50mA
D
V = 10V
Fig. 13 Static Drain-Source On-Resistance
Fig. 15 Static Drain-Source On-Resistance
2
DS
V
Pulsed
V
1
GS
V
GS
Fig. 11 Transfer Characteristics
GS,
4
= 5V
,
I = 115mA
D
GATE-SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
I
vs. Gate-Source Voltage
D
,
6
2
T = 125°C
DRAIN CURRENT (A)
0.01
A
vs. Drain Current
8
T = -55°C
A
3
10
T = 150°C
12
T = 85°C
T =
A
A
T =
A
T = 25°C
4
A
A
0.1
85°C
T =
14
125°C
A
T =
25°C
A
T = 25°C
Pulsed
T =
16
A
-55°C
A
5
LMN400B01
150°C
18
6
20
1