MMUN2112LT1 ON Semiconductor, MMUN2112LT1 Datasheet - Page 3

TRANS BRT PNP 50V SOT-23

MMUN2112LT1

Manufacturer Part Number
MMUN2112LT1
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMUN2112LT1

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Price
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Manufacturer:
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ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
(V
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.25 V, R
= 0.050 V, R
Characteristic
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted) (Continued)
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3
Symbol
V
CE(sat)
V
V
h
FE
OH
OL
Min
160
160
3.0
8.0
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
35
60
80
80
15
80
80
Typ
100
140
140
250
250
140
130
5.0
60
15
27
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
Vdc
Vdc
Vdc

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