MUN5137T1 ON Semiconductor, MUN5137T1 Datasheet - Page 8

• Manufacturer Part Number: MUN5137T1
• Description: TRANS BRT PNP 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5137T1

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MUN5137T1OS

0.001
0.1
10
0.01
1
4.5
3.5
2.5
1.5
0.5
0.1
4
3
2
1
0
1
0
Figure 21. Input Voltage versus Output Current
0
0
V
O
I
C
2
= 0.2 V
/I
B
= 10
4
10
Figure 19. Output Capacitance
Figure 17. V
V
6
R
I
20
C
, REVERSE BIAS VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (mA)
C
, COLLECTOR CURRENT (mA)
8
75°C
20
10
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1
15 20
CE(sat)
40
T
A
30
= -25°C
versus I
25 30
75°C
T
A
= -25°C
25°C
f = 1 MHz
l
T
60
E
A
35 40
40
C
= 0 V
= 25°C
http://onsemi.com
25°C
45 50
50
80
8
180
160
140
120
100
100
Figure 22. Inexpensive, Unregulated Current Source
10
80
60
40
20
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
CE
2
= 10 V
4
Typical Application
2
for PNP BRTs
6
Figure 18. DC Current Gain
I
C
8
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
10
T
4
A
15 20 40 50 60 70 80 90
= 75°C
-25°C
-25°C
6
25°C
V
O
= 5 V
T
A
+12 V
= 75°C
8
25°C
LOAD
10
100