MMUN2111LT1 ON Semiconductor, MMUN2111LT1 Datasheet - Page 6

• Manufacturer Part Number: MMUN2111LT1
• Description: TRANS BRT PNP 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2111LT1

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMUN2111LT1OSCT

0.01
0.1
10
4
3
2
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 9. Output Capacitance
V
R
Figure 7. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
40
100
0.1
10
1
30
0
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 11. Input Voltage versus Output Current
versus I
V
O
T
= 0.2 V
60
A
10
C
f = 1 MHz
l
T
E
40
A
= -25°C
= 0 V
= 25°C
I
C
, COLLECTOR CURRENT (mA)
75°C
http://onsemi.com
MMUN2112LT1
25°C
T
A
= -25°C
50
80
20
6
75°C
0.001
1000
0.01
100
100
0.1
10
30
10
1
1
0
25°C
Figure 10. Output Current versus Input Voltage
1
75°C
40
2
Figure 8. DC Current Gain
25°C
I
C
V
3
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
T
A
= -25°C
4
5
10
6
7
T
A
V
= 75°C
V
8
CE
O
= 5 V
= 10 V
-25°C
9
25°C
100
10