DTC124ESATP Rohm Semiconductor, DTC124ESATP Datasheet - Page 2

• Manufacturer Part Number: DTC124ESATP
• Description: TRANSISTOR NPN 50V 30MA SPT TB
• Manufacturer: Rohm Semiconductor

Specifications of DTC124ESATP

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Through Hole
• Package / Case: SC-72-3, SPT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTC124EM / DTC124EE / DTC124EUA / DTC124EKA
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Fig.1 Input voltage vs. output current
500m
200m
100m
500m
200m
100m
50m
20m
10m
100
2009 ROHM Co., Ltd. All rights reserved.
5m
2m
1m
50
20
10
100μ 200μ 500μ 1m
100μ 200μ
5
2
1
1
Fig.4 Output voltage vs. output
Parameter
(ON characteristics)
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
Ta=−40°C
500μ 1m
100°C
25°C
Ta=100°C
2m
−40°C
2m
25°C
Symbol
5m 10m 20m 50m 100m
5m 10m 20m 50m 100m
I
C(Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
O
O
Symbol
R
(A)
(A)
V
V
V
I
O(off)
V
l
O(on)
G
R
2
O
DTC124EM
I(off)
I(on)
f
I
/R
O
T
I
/l
1
=0.2V
I
I
=20
∗
1
Min.
15.4
0.8
56
150
−
3
−
−
−
−
DTC124EE
−55 to +150
Typ.
250
−10 to +40
0.1
22
−
−
−
−
−
1
Limits
100
150
50
30
DTC124EUA DTC124EKA
Max.
28.6
0.36
0.5
0.3
0.5
1.2
−
−
−
Fig.2 Output current vs. input voltage
500μ
200μ
100μ
10m
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
0
200
MHz
Unit
mA
μA
kΩ
V
Ta=100°C
V
V
−
−
(OFF characteristics)
CC
=5V
−40°C
0.5
25°C
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=5V
=0.2V, I
=5V, I
1.0
I
=10mA/0.5mA
=10V, I
=5V, I
=50V, V
2/2
Unit
mW
O
mA
°C
°C
1.5
O
V
V
=5mA
O
=100μA
E
Conditions
=5mA
I
=−5mA, f=100MHz
=0V
2.0
−
−
I(off)
(V)
2.5
3.0
500
200
100
50
20
10
1k
5
2
1
100μ 200μ
Fig.3 DC current gain vs. output
OUTPUT CURRENT : I
current
500μ 1m
Ta=100°C
−40°C
25°C
2009.06 - Rev.B
2m
Data Sheet
5m 10m 20m 50m 100m
O
(A)
V
O
=5V