PDTC123YT,215 NXP Semiconductors, PDTC123YT,215 Datasheet - Page 4

• Manufacturer Part Number: PDTC123YT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTC123YT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.22
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058194215; PDTC123YT T/R; PDTC123YT T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PDTC123Y_SER_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
[2]
[3]
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
positive
negative
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 04 — 16 November 2009
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
T
p
amb
≤ 1ms
≤ 25 °C
[2][3]
PDTC123Y series
[1]
[1]
[1]
[1]
[1]
[2][3]
Min
-
-
-
-
-
-
[1]
[1]
[1]
[1]
[1]
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
−65
−65
Typ
-
-
-
-
-
-
Max
50
50
5
+12
−5
100
100
150
250
250
500
250
200
+150
150
+150
© NXP B.V. 2009. All rights reserved.
Max
833
500
500
250
500
625
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
°C
°C
°C
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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