UNR52A1G0L Panasonic - SSG, UNR52A1G0L Datasheet - Page 2

• Manufacturer Part Number: UNR52A1G0L
• Description: TRANS NPN W/RES 35HFE S-MINI 3P
• Manufacturer: Panasonic - SSG

Specifications of UNR52A1G0L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 80mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: S-Mini 3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR52A1G0LTR

UNR52A1G
2
200
100
10
240
160
10
10
80
0
−1
10
1
0
2
1
0
−1
Ambient temperature T
Collector current I
Output current I
UNR52A1G_h
40
UNR52A1G_V
UNR52A1G_P
1
T
V
h
a
P
FE
= 85°C
IN
T
10
 T
80
 I
 I
−25°C
a
C
O
FE
O
10
C
T
IN
V
-I
-T
25°C
V
T
(mA)
120
-I
CE
(mA)
C
a
O
a
O
a
= 25°C
= 10 V
= 0.2 V
(°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
10
160
10
2
2
80
60
40
20
4
2
0
0
1
0
Collector-emitter voltage V
Collector-base voltage V
T
a
= 25°C
SJH00282AED
UNR52A1G_C
UNR52A1G_I
4
C
I
C
ob
 V
10
 V
CE
CB
C
ob
-V
8
-V
f = 1 MHz
T
CE
a
CB
I
CB
B
= 25°C
= 1.0 mA
CE
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
(V)
(V)
10
12
2
10
10
10
10
10
10
10
−1
−2
−1
−2
−3
1
1
1
0
I
C
/ I
Collector current I
B
UNR52A1G_V
Input voltage V
= 10
UNR52A1G_I
T
a
V
= 85°C
CE(sat)
I
0.8
O
 V
25°C
10
 I
−25°C
IN
CE(sat)
O
IN
C
C
-V
V
T
(mA)
a
(V)
O
IN
-I
= 25°C
1.6
= 5 V
C
10
2