UNR51A1G0L Panasonic - SSG, UNR51A1G0L Datasheet - Page 2

• Manufacturer Part Number: UNR51A1G0L
• Description: TRANS PNP W/RES 35HFE S-MINI 3P
• Manufacturer: Panasonic - SSG

Specifications of UNR51A1G0L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 80mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 80MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: S-Mini 3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR51A1G0LTR

UNR51A1G
2
−10
−10
160
120
−10
200
150
100
80
40
−1
50
−10
−1
0
0
2
−1
0
−1
Ambient temperature T
Collector current I
Output current I
40
UNR51A1G_h
UNR51A1G_V
UNR51A1G_P
−1
V
h
P
T
FE
IN
T
a
−10
= 85°C
 T
80
 I
 I
−25°C
a
C
O
−10
O
V
T
FE
T
C
IN
V
a
O
-T
-I
(mA)
-I
= 25°C
120
CE
(mA)
= − 0.2 V
C
a
a
O
25°C
= −10 V
(°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
−10
−10
160
2
2
−80
−60
−40
−20
0
4
2
0
−1
0
Collector-emitter voltage V
T
Collector-base voltage V
a
= 25°C
SJH00263AED
UNR51A1G_I
UNR51A1G_C
−4
C
I
C
ob
 V
−10
 V
CE
CB
C
−8
ob
-V
-V
f = 1 MHz
T
CE
a
CB
I
CB
B
= 25°C
CE
= −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
(V)
(V)
−10
−12
2
−10
−10
−10
−10
−10
−10
−10
−1
−1
−1
−2
−1
−2
−3
−1
0
Collector current I
UNR51A1G_V
25°C
Input voltage V
UNR51A1G_I
T
V
a
− 0.8
= 85°C
CE(sat)
I
O
 V
−10
 I
−25°C
IN
CE(sat)
O
IN
V
T
C
-V
C
a
O
I
C
= 25°C
(mA)
(V)
IN
= − 0.2 V
−1.6
-I
/ I
C
B
= 10
−10
2