UNR511NG0L Panasonic - SSG, UNR511NG0L Datasheet - Page 2

• Manufacturer Part Number: UNR511NG0L
• Description: TRANS PNP W/RES 80 HFE S-MINI 3P
• Manufacturer: Panasonic - SSG

Specifications of UNR511NG0L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 80MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: S-Mini 3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR511NG0LTR

UNR511xG Series
■ Electrical Characteristics T
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR5113G
(Collector open) UNR5112G/5114G/511DG/
Forward current UNR511VG
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input
resistance
Resistance
ratio
Parameter
UNR5110G/5115G/5116G/5117G
511EG/511MG/511NG/511TG
UNR511ZG
UNR5111G
UNR511FG/511HG
UNR5119G
UNR5118G/511LG/511VG
UNR5118G/511LG
UNR5119G/511DG/511FG/511HG
UNR5111G
UNR5112/511EG
UNR511ZG
UNR5113/5114/511MG
UNR511N/511TG
UNR5110G
5116G
UNR511VG
UNR5113G
UNR511DG
UNR511EG
UNR5118G
UNR511HG/511MG/511VG
UNR5116G/511FG/511LG
511NG/511ZG
UNR5111G/5114G/5115G
UNR5112G/5117G/511TG
UNR5110G/5113G/511DG/511EG
UNR511MG
UNR511NG
UNR5118G/5119G
UNR511ZG
UNR5119G
*
/5117G
This product complies with the RoHS Directive (EU 2002/95/EC).
*
/5115G
*
*
/
a
= 25°C ± 3°C
Symbol
V
R
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
1
f
CBO
CEO
FE
OH
OL
/R
T
1
2
I
I
V
V
V
V
I
I
V
V
V
V
V
V
C
C
C
C
CB
CB
CE
EB
CE
CC
CC
CC
CC
CC
= −10 µA, I
= −2 mA, I
= −10 mA, I
= −10 mA, I
SJH00196AED
= −10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= −5 V, V
= −50 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
Conditions
B
C
E
E
B
B
B
B
B
B
B
B
C
E
= 0
= 0
= 1 mA, f = 200 MHz
= 0
= − 0.5 V, R
= −2.5 V, R
= −3.5 V, R
= −10 V, R
= −6 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= −1.5 mA
L
L
= 1 kΩ
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
−4.9
0.08
Min
−50
−50
160
20
30
35
60
60
80
80
6
0.047
0.51
0.10
0.21
Typ
1.0
2.2
4.7
0.1
80
10
22
47
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
− 0.4
− 0.5
− 0.2
Max
−1.0
−1.5
−2.0
0.12
200
400
460
20
MHz
Unit
mA
µA
µA
kΩ


V
V
V
V
V