MPSA18 ON Semiconductor, MPSA18 Datasheet - Page 2
MPSA18
Manufacturer Part Number
MPSA18
Description
TRANS NPN GP BIPO LN 45V TO-92
Manufacturer
ON Semiconductor
Datasheet
1.MPSA18RLRA.pdf
(5 pages)
Specifications of MPSA18
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
160MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MPSA18OS
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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
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Manufacturer:
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Company:
Part Number:
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Manufacturer:
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Company:
Part Number:
MPSA18RLRMG
Manufacturer:
ON Semiconductor
Quantity:
10 150
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Noise Figure
(I
C
= 100 mAdc, V
(I
(I
(I
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
Equivalent Short Circuit Noise Voltage
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 1.0 mAdc, V
= 1.0 mAdc, V
= 100 mAdc, V
= 100 mAdc, V
= 30 Vdc, I
= 5.0 Vdc, I
= 0.5 Vdc, I
CE
= 5.0 Vdc, R
C
B
B
B
E
CE
E
C
CE
E
= 0)
CE
CE
CE
CE
CE
CE
= 0)
= 0.5 mAdc)
= 5.0 mAdc)
= 0)
Characteristic
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, R
= 5.0 Vdc, R
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
S
= 1.0 kW, f = 100 Hz)
(T
A
S
S
= 25°C unless otherwise noted)
= 10 kW, f = 1.0 kHz)
= 1.0 kW, f = 100 Hz)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
MPSA18
2
TRANSISTOR
IDEAL
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
BE(on)
C
CBO
h
C
NF
V
f
FE
T
cb
eb
T
Min
400
500
500
500
100
6.5
45
45
−
−
−
−
−
−
−
−
−
1100
1150
0.08
Typ
580
850
160
1.0
0.6
1.7
5.6
0.5
4.0
6.5
−
−
−
−
1500
Max
0.2
0.3
0.7
3.0
6.5
1.5
50
−
−
−
−
−
−
−
−
−
nV
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
dB
−
Hz