BC807-40LT1G ON Semiconductor, BC807-40LT1G Datasheet - Page 6

• Manufacturer Part Number: BC807-40LT1G
• Description: TRANS PNP GP 500MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC807-40LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250 at 100 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 250
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC807-40LT1GOSTR

+1.0
-1.0
-2.0
0
-1.0
q
VB
for V
Figure 14. Temperature Coefficients
BE
q
VC
for V
I
C
-10
, COLLECTOR CURRENT
CE(sat)
-1.0
-0.8
-0.6
-0.4
-0.2
-0.01
0
TYPICAL CHARACTERISTICS − BC807−25LT1
I
C
-100
= -10 mA
Figure 13. Saturation Region
-0.1
I
C
I
http://onsemi.com
B
= -100 mA
, BASE CURRENT (mA)
-1000
-1.0
6
I
C
= -300 mA
100
1.0
10
-0.1
-10
I
-500 mA
T
C
J
=
= 25°C
Figure 15. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-100
C
ib
-10
C
ob
-100