BCX 71K E6327 Infineon Technologies, BCX 71K E6327 Datasheet - Page 4

• Manufacturer Part Number: BCX 71K E6327
• Description: TRANSISTOR PNP AF 45V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCX 71K E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 380 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Frequency: 250 MHz
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCX 71K E6327; BCX71KE6327INTR; BCX71KE6327XT; SP000010632

DC Electrical Characteristics
Parameter
Characteristics
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage
I
I
I
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 10 µA, V
= 2 mA, V
= 50 mA, V
CE
B
B
B
B
CE
CE
= 0.25 mA
= 1.25 mA
= 0.25 mA
= 1.25 mA
= 5 V
= 5 V
= 1 V
1)
1)
1)
4
Symbol
V
V
V
CEsat
BEsat
BE(ON)
min.
0.55
-
-
-
-
-
-
BCW61..., BCX71...
Values
0.12
0.83
0.52
0.65
0.78
typ.
0.2
0.7
max.
0.25
0.55
0.85
1.05
0.75
2007-10-18
-
-
Unit
V