BCV48,115 NXP Semiconductors, BCV48,115 Datasheet - Page 5

TRANS DARL PNP 60V 500MA SOT89

BCV48,115

Manufacturer Part Number
BCV48,115
Description
TRANS DARL PNP 60V 500MA SOT89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV48,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mounting Type
Surface Mount
Power - Max
1.3W
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Transistor Type
PNP - Darlington
Frequency - Transition
220MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Dc Current Gain
2000@1mA@5V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
934021680115::BCV48 T/R::BCV48 T/R
NXP Semiconductors
2004 Dec 06
handbook, full pagewidth
PNP Darlington transistors
V
100000
80000
60000
40000
20000
CE
h FE
= −5 V.
0
−1
Fig.2 DC current gain; typical values.
−10
5
−10
2
I C (mA)
BCV28; BCV48
Product data sheet
MGD836
−10
3

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