BC807-40W,115 NXP Semiconductors, BC807-40W,115 Datasheet - Page 9

• Manufacturer Part Number: BC807-40W,115
• Description: TRANSISTOR PNP 500MA 45V SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BC807-40W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 200mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 80MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 250
• Frequency (max): 80MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934024260115::BC807-40W T/R::BC807-40W T/R

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 10. Selection -16: Collector current as a function
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
−1.2
−0.8
−0.4
C
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= −16.0 mA
= −14.4 mA
= −12.8 mA
= −11.2 mA
= −9.6 mA
= −8.0 mA
= −6.4 mA
= −4.8 mA
= −3.2 mA
= −1.6 mA
= 25 °C
−1
−2
−3
(3)
−4
006aaa128
(2)
V
CE
(10)
(V)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
Rev. 06 — 17 November 2009
−5
Fig 11. Selection -25: Collector current as a function
BC807; BC807W; BC327
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
−1.2
−0.8
−0.4
C
45 V, 500 mA PNP general-purpose transistors
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= −13.0 mA
= −11.7 mA
= −10.4 mA
= −9.1 mA
= −7.8 mA
= −6.5 mA
= −5.2 mA
= −3.9 mA
= −2.6 mA
= −1.3 mA
= 25 °C
−1
−2
−3
(3)
© NXP B.V. 2009. All rights reserved.
−4
006aaa129
V
(2)
CE
(10)
(V)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
−5
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