D44H11 Fairchild Semiconductor, D44H11 Datasheet

TRANSISTOR NPN 80V 8A TO-220

D44H11

Manufacturer Part Number
D44H11
Description
TRANSISTOR NPN 80V 8A TO-220
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of D44H11

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
60W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
10 A
Maximum Dc Collector Current
10 A
Power Dissipation
50 W
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 2 A at 1 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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© 2010 Fairchild Semiconductor Corporation
D44H8 / NZT44H8 / D44H11 Rev. B2
D44H8 / NZT44H8 / D44H11
NPN Power Amplifier
Features
• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from process 4Q.
Absolute Maximum Ratings*
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
Thermal Characteristics
*Device mounted on FR-4 PCB 36mm X 18mm X 1.5mm; mounting pad for the collector lead min. 6cm
operations.
Symbol
Symbol
T
J
V
R
R
, T
P
CEO
I
θJC
θJA
C
D
STG
Collector-Emitter Voltage
Collector Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Derate above 25°C
D44H8 / D44H11
B
C
E
T
Parameter
Parameter
A
- Continuous
=25°C unless otherwise noted
T
A
TO-220
=25°C unless otherwise noted
1
C
NZT44H8
NZT44H8
D44H11
D44H8
D44H8
62.5
480
8.0
2.1
60
60
B
-55 to +150
C
Value
Max.
SOT-223
E
*NZT44H8
D44H11
10.0
83.3
1.5
80
12
2
.
February 2010
www.fairchildsemi.com
mW/°C
Units
Units
°C/W
°C/W
°C
W
V
A

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D44H11 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA *Device mounted on FR-4 PCB 36mm X 18mm X 1.5mm; mounting pad for the collector lead min. 6cm © 2010 Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev TO-220 E T =25°C unless otherwise noted A Parameter ...

Page 2

... FE V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter Saturation Voltage BE(sat) V Base-Emitter On Voltage BE(on) Small Signal Characteristics f Current Gain-Bandwidth Product T © 2010 Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev =25°C unless otherwise noted A Parameter Test Condition D44H8 / NZT44H8 I = 100mA D44H11 V D44H8 / NZT44H8 CB V D44H11 ...

Page 3

... Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev www.fairchildsemi.com ...

Page 4

... Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev www.fairchildsemi.com ...

Page 5

... Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev www.fairchildsemi.com ...

Page 6

... Physical Dimensions © 2010 Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev. B2 TO-220 6 Dimensions in Millimeters www.fairchildsemi.com ...

Page 7

... Physical Dimensions © 2010 Fairchild Semiconductor Corporation D44H8 / NZT44H8 / D44H11 Rev. B2 (Continued) SOT-223 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

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