NZT660A Fairchild Semiconductor, NZT660A Datasheet
NZT660A
Manufacturer Part Number
NZT660A
Description
TRANSISTOR PNP GP 60V SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.NZT660A.pdf
(5 pages)
Specifications of NZT660A
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 300mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 500mA, 2V
Power - Max
2W
Frequency - Transition
75MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
250
Maximum Operating Frequency
75 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NZT660A
Manufacturer:
FAIRCHILD
Quantity:
11 550
Part Number:
NZT660A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NZT660A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
NZT660/NZT660A Rev. C3
NZT660/NZT660A
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
On Characteristics *
h
Symbol
C
CBO
EBO
J
FE
CEO
CBO
EBO
, T
CEO
CBO
EBO
Symbol
STG
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
Parameter
T
a
= 25°C unless otherwise noted
T
- Continuous
a
=25°C unless otherwise noted
1. Base 2. Collector 3. Emitter
I
I
I
V
V
V
I
I
I
I
C
C
E
C
C
C
C
4
CB
CB
EB
= 10mA
= 100µA
= 100µA
= 100mA, V
= 500mA, V
= 1A, V
= 3A, V
= 30V
= 30V, T
= 4V
Test Conditions
CE
CE
1
1
A
= 2V
= 2V
CE
CE
= 100°C
SOT-223
2
= 2V
= 2V
3
NZT660
NZT660A
- 55 ~ +150
NZT660
NZT660A
NZT660
60
80
3
5
Min.
100
250
60
80
60
70
80
25
5
NZT660A
- 55 ~ +150
Typ.
60
60
5
3
Max.
100
100
300
550
10
www.fairchildsemi.com
April 2005
Units
°C
V
V
V
A
Units
nA
µA
nA
V
V
V
V
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NZT660A Summary of contents
Page 1
... CBO BV Emitter-Base Breakdown Voltage EBO I Collector-Base Cutoff Current CBO I Emitter-Base Cutoff Current EBO On Characteristics * h DC Current Gain FE ©2005 Fairchild Semiconductor Corporation NZT660/NZT660A Rev SOT-223 1. Base 2. Collector 3. Emitter T =25°C unless otherwise noted a Parameter NZT660 - Continuous - 55 ~ +150 T = 25°C unless otherwise noted ...
Page 2
... Small Signal Characteristics C Output Capacitance obo f Transition Frequency T * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Ambient θJA NZT660/NZT660A Rev 25°C unless otherwise noted (Continued) a Test Conditions 100mA 3A 300mA ...
Page 3
... I - COLLECTOR CURRENT (A) C NZT660/NZT660A Rev. C3 Figure 2. Base-Emitter On Voltage 1 2.0V ce 1.4 1.2 1 0.8 0.6 0.4 0.2 0.0001 1 10 Figure 4. Input/Output Capacitance 400 350 300 125°C 250 25° ...
Page 4
... Mechanical Dimensions (0.95) NZT660/NZT660A Rev. C3 SOT-223 3.00 ±0.10 MAX1.80 2.30 TYP 0.70 ±0.10 (0.95) ±0.25 0.25 4.60 ±0.20 6.50 4 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete NZT660/NZT660A Rev. C3 IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...