BGE885 NXP Semiconductors, BGE885 Datasheet - Page 3

• Manufacturer Part Number: BGE885
• Description: RF Amplifier BULK CATV-MOD
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGE885

• Operating Frequency: 860 MHz
• Noise Figure: 8 dB at 860 MHz
• Supply Current: 240 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Manufacturer's Type: Push Pull Amplifier
• Frequency (max): 860MHz
• Operating Supply Voltage (typ): 24V
• Package Type: SOT-115D
• Mounting: Through Hole
• Pin Count: 9
• Noise Figure (typ): 8(Max)@860MHzdB
• Operating Temp Range: -20C to 100C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGE885,112

NXP Semiconductors
CHARACTERISTICS
Bandwidth 40 to 860 MHz; V
Notes
1. f
2. Measured according to DIN45004B:
3. The module normally operates at V
2001 Oct 31
G
SL
FL
s
s
d
V
F
I
tot
11
22
2
o
860 MHz, 17 dB gain push-pull amplifier
p
SYMBOL
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 860.25 MHz; V
= 349.25 MHz; V
= 403.25 MHz; V
= 851.25 MHz; V
= 858.25 MHz; V
p
p
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
second order distortion
output voltage
noise figure
total current consumption (DC)
+ f
+ f
q
q
r
p
q
p
q
= 752.5 MHz.
 f
= V
= 59 dBmV;
= 59 dBmV;
= V
= V
r
= 849.25 MHz.
o
o
o
B
6 dB;
= 59 dBmV;
6 dB;
PARAMETER
= 24 V; T
B
mb
= 24 V, but is able to withstand supply transients up to 30 V.
= 30 C; Z
S
= Z
f = 50 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 450 MHz
f = 450 to 860 MHz
f = 40 to 450 MHz
f = 450 to 860 MHz
note 1
d
f = 350 MHz
f = 860 MHz
note 3
L
im
3
= 75 
= 60 dB; note 2
CONDITIONS
16.5
0.2

14
10
14
10

59



MIN.
Product specification
17.5
1.2
0.5




53

7.5
8
240
MAX.
BGE885
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dB
dB
mA
UNIT