MAX19994AETX+T Maxim Integrated Products, MAX19994AETX+T Datasheet - Page 2

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MAX19994AETX+T

Manufacturer Part Number
MAX19994AETX+T
Description
RF Mixer Dual SiGe High-Linea rity 1200-2000MHz Do
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX19994AETX+T

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
V
LO1, LO2 to GND .................................................-0.3V to +0.3V
LOSEL to GND .........................................-0.3V to (V CC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ........................ +15dBm
RFMAIN, RFDIV Current
Continuous Power Dissipation (Note 1) ..............................8.7W
B
Note 1: Junction temperature T
Note 2: Based on junction temperature T
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
Note 4: T
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
Typical values are at V
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
Typical values are at V
RECOMMENDED AC OPERATING CONDITIONS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
JA
CC
(RF is DC shorted to GND through a balun) ...................50mA
Supply Voltage
Supply Current
LOSEL Input High Voltage
LOSEL Input Low Voltage
LOSEL Input Current
Supply Voltage
Supply Current
LOSEL Input High Voltage
LOSEL Input Low Voltage
RF Frequency
LO Frequency
(Notes 1, 3) ............................................................ +38NC/W
to GND ..........................................................-0.3V to +5.5V
known. The junction temperature must not exceed +150NC.
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
C
is the temperature on the exposed pad of the package. T
PARAMETER
PARAMETER
PARAMETER
CC
CC
= 5.0V, T
= 3.3V, T
CC
CC
J
= 4.75V to 5.25V, no input AC signals. T
= 3.0V to 3.6V, no input AC signals. T
= T
C
C
A
= +25NC, unless otherwise noted. All parameters are production tested.)
= +25NC, unless otherwise noted.)
+ (B
SYMBOL
I
SYMBOL
SYMBOL
IH and
J
JA
V
V
= T
I
I
V
V
f
V
V
f
CC
CC
LO
RF
CC
CC
IH
IH
IL
IL
x V
C
I
IL
+ (B
CC
Total supply current
Total supply current
C1 = C8 = 39pF (Note 5)
C1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5)
(Note 5)
x I
JC
CC
x V
). This formula can be used when the ambient temperature of the PCB is
CC
x I
CC
CONDITIONS
CONDITIONS
CONDITIONS
). This formula can be used when the temperature of the
B
Operating Case Temperature
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
JC
A
Range (Note 4) ................................................. -40NC to +85NC
is the ambient temperature of the device and PCB.
C
(Notes 2, 3) ..............................................................7.4NC/W
C
= -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
= -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI.
1200
1700
1450
4.75
MIN
MIN
MIN
-10
3.0
2
TYP
TYP
TYP
330
264
3.3
0.8
5
2
MAX
MAX
MAX
1700
2000
2050
5.25
420
+10
0.8
3.6
UNITS
UNITS
UNITS
MHz
MHz
mA
mA
FA
V
V
V
V
V
V

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