BDW93C STMicroelectronics, BDW93C Datasheet

TRANSISTOR DARL NPN TO-220

BDW93C

Manufacturer Part Number
BDW93C
Description
TRANSISTOR DARL NPN TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BDW93C

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 5A, 3V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
12 A
Maximum Collector Cut-off Current
100 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Base-emitter Saturation Voltage (max)
2.5V
Collector-emitter Saturation Voltage
2V
Collector Current (dc) (max)
12A
Dc Current Gain
100
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Dc
0937
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7180-5
BDW93CST

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APPLICATIONS
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
ABSOLUTE MAXIMUM RATINGS
October 1999
For PNP types voltage and current values are negative.
Symbol
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
V
V
P
T
I
CBO
CEO
I
CM
I
T
stg
C
B
tot
j
transistor
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
in
Parameter
monolithic
c
25
E
COMPLEMENTARY SILICON POWER
= 0)
B
o
C
= 0)
Darlington
DARLINGTON TRANSISTORS
NPN
PNP
INTERNAL SCHEMATIC DIAGRAM
BDW94B
BDW94B/BDW94C
R
1
80
80
Typ. = 10 K
-65 to 150
Value
150
0.2
12
15
80
TO-220
R
BDW93C
BDW94C
2
Typ. = 150
1
100
100
BDW93C
2
3
Unit
o
o
W
V
V
A
A
A
C
C
1/6

Related parts for BDW93C

BDW93C Summary of contents

Page 1

... SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic configuration mounted in Jedec TO-220 plastic package intented for use in power linear and switching applications. The complementary PNP type is BDW94C. ...

Page 2

... For PNP types voltage and current values are negative. 2 unless otherwise specified) case Test Conditions for BDW94B for BDW93C/94C V = 100 150 C case for BDW94B for BDW93C/94C V = 100 V CB for BDW94B for BDW93C/94C V = 100 100 mA C for BDW94B for BDW93C/94C 100 100 ...

Page 3

... Safe Operating Area Collector Emitter Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (NPN types) BDW93C/BDW94B/BDW94C DC Current Gain (NPN types) DC Transconductance (NPN types) Collector Emitter Saturation Voltage (PNP types) 3/6 ...

Page 4

... BDW93C/BDW94B/BDW94C Saturated Switching Characteristics (NPN types) Collector Emitter Saturation Voltage (PNP types) DC Transconductance (PNP types) 4/6 Saturated Switching Characteristics (PNP types) DC Current Gain (PNP types) ...

Page 5

... BDW93C/BDW94B/BDW94C inch MIN. TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 ...

Page 6

... BDW93C/BDW94B/BDW94C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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