MPSA12 Fairchild Semiconductor, MPSA12 Datasheet

TRANSISTOR NPN SS DARL 20K TO-92

MPSA12

Manufacturer Part Number
MPSA12
Description
TRANSISTOR NPN SS DARL 20K TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPSA12

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
1V @ 10µA, 10mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 10mA, 5V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
20 V
Maximum Dc Collector Current
1.2 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1.2 A
Dc Collector/base Gain Hfe Min
20000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
• Sourced from process 05.
• See MPSA14 for characteristics.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
I
I
I
On Characteristics *
h
V
V
P
R
R
C
CBO
CES
EBO
Symbol
current gain at currents to 1.0A.
FE
J
CES
CBO
EBO
(BR)CES
CE
BE
D
Symbol
, T
JC
JA
Symbol
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
A
T
Parameter
=25 C unless otherwise noted
A
=25 C unless otherwise noted
T
Parameter
A
=25 C unless otherwise noted
- Continuous
MPSA12
I
V
V
V
V
I
I
C
C
C
CB
CB
EB
CE
= 100 A, I
= 10mA, I
= 10mA, V
= 15V, I
= 15V, I
= 10V, I
= 5.0V, I
Test Condition
C
E
C
B
E
C
CE
= 0
= 0
= 0
= 0.01mA
= 0
= 10mA
= 5.0V
-55 ~ +150
1. Emitter 2. Base 3. Collector
Value
1
20,000
1.2
20
20
10
Min.
20
Max.
83.3
625
200
5.0
Typ.
TO-92
Max.
100
100
100
1.0
1.4
Rev. A2, November 2002
Units
mW/ C
Units
V
V
V
A
mW
C/W
C/W
C
Units
nA
nA
nA
V
V
V

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MPSA12 Summary of contents

Page 1

... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation MPSA12 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 100 ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, November 2002 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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