MUN5130DW1T1G ON Semiconductor, MUN5130DW1T1G Datasheet - Page 4

• Manufacturer Part Number: MUN5130DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5130DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 4) (Continued)
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
(V
(V
(V
(V
(V
(V
(V
CC
CC
CC
CC
CC
CC
CC
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
= −5.0 V, V
B
B
B
B
B
B
B
= −2.5 V, R
= −3.5 V, R
= −5.5 V, R
= −4.0 V, R
= −0.5 V, R
= −0.05 V, R
= − 0.25 V, R
Characteristic
L
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted, common for Q
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5137DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
MUN5132DW1T1G
MUN5133DW1T1G
MUN5134DW1T1G
MUN5135DW1T1G
MUN5136DW1T1G
MUN5137DW1T1G
MUN5112DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5113DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5111DW1T1G
MUN5111DW1T1G
MUN5111DW1T1G
MUN5111DW1T1G
http://onsemi.com
4
Symbol
R
V
V
R
1
OH
OL
/R
1
2
1
and Q
0.055
0.038
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
−4.9
15.4
32.9
15.4
1.54
32.9
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
0.8
0.8
0.8
0.8
0.8
1.7
70
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
) (Continued)
0.047
0.21
0.12
0.47
2.15
Typ
100
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
22
47
10
10
22
47
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.185
0.056
Max
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
28.6
61.1
28.6
2.86
61.1
0.25
0.56
130
6.1
1.3
2.9
6.1
6.1
1.2
1.2
1.2
1.2
1.2
1.2
1.2
2.6
13
13
13
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Vdc
Vdc
k W