NSBC123JPDXV6T1 ON Semiconductor, NSBC123JPDXV6T1 Datasheet - Page 3

TRANS BR NPN/PNP DUAL 50V SOT563

NSBC123JPDXV6T1

Manufacturer Part Number
NSBC123JPDXV6T1
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBC123JPDXV6T1

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Other names
NSBC123JPDXV6OSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSBC123JPDXV6T1G
Manufacturer:
ON
Quantity:
30 000
ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 3)
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Collector-Emitter Saturation Voltage
(I
(I
(I
Output Voltage (on)
(V
(V
Output Voltage (off)
(V
(V
(V
C
C
C
A
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 25°C unless otherwise noted, common for Q
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
B
B
B
B
B
B
= 0.3 mA)
B
B
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.050 V, R
= 0.25 V, R
L
L
L
Characteristic
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
L
= 1.0 kW)
= 1.0 kW)
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NSBC114EPDXV6T1G
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NSBC114EPDXV6T1G
NSBC114YPDXV6T1G
NSBC113EPDXV6T1G
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NSBC123JPDXV6T1G
NSBC114TPDXV6T1G
NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
1
and Q
http://onsemi.com
2
, − minus sign for Q
3
Symbol
V
CE(sat)
V
V
OH
OL
1
(PNP) omitted)
Min
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
Typ
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
Vdc
Vdc
Vdc

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