MUN5230DW1T1G ON Semiconductor, MUN5230DW1T1G Datasheet - Page 12

• Manufacturer Part Number: MUN5230DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5230DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 1kohm
• Base-emitter Resistor R2: 1kohm
• Resistor Ratio, R1 / R2: 1
• No. Of Pins: 6
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MUN5230DW1T1G; MUN5230DW1T1GOSTR

Final Product/Process Change Notification #16266
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 12 of 36