PUMD3,135 NXP Semiconductors, PUMD3,135 Datasheet - Page 5

• Manufacturer Part Number: PUMD3,135
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD3,135

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934050170135

NXP Semiconductors
PEMD3_PIMD3_PUMD3_10
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
FE
10
10
10
10
−1
3
2
1
1
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): On-state input voltage as a
function of collector current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= 5 V
= 0.3 V
= 150 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
I
I
C
C
006aaa034
(mA)
006aaa036
(mA)
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
10
10
2
2
Fig 2.
Fig 4.
V
V
CEsat
PEMD3; PIMD3; PUMD3
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
10
−1
−2
−1
1
1
10
1
I
TR1 (NPN): Collector-emitter voltage as a
function of collector current; typical values
V
TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
C
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
(1)
(2)
(3)
10
−1
10
(1)
(2)
(3)
1
I
C
(mA)
I
© NXP B.V. 2009. All rights reserved.
C
006aaa035
006aaa037
(mA)
10
10
2
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