PUMH2,115 NXP Semiconductors, PUMH2,115 Datasheet - Page 5

TRANS NPN 50V 100MA SOT363

PUMH2,115

Manufacturer Part Number
PUMH2,115
Description
TRANS NPN 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH2,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
47 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055787115
PUMH2 T/R
PUMH2 T/R
NXP Semiconductors
PACKAGE OUTLINES
2004 Apr 14
NPN/NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
JEITA
scale
1
5
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PEMH2; PUMH2
L p
c
X
Product data sheet
ISSUE DATE
04-11-08
06-03-16
SOT666

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