NSBC143TPDXV6T1G ON Semiconductor, NSBC143TPDXV6T1G Datasheet - Page 11

• Manufacturer Part Number: NSBC143TPDXV6T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBC143TPDXV6T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 4.7kohm
• Rf Transistor Case: SOT-563
• No. Of Pins: 6
• Continuous Collector Current Max: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: NSBC143TPDXV6T1GOS; NSBC143TPDXV6T1GOS; NSBC143TPDXV6T1GOSTR

0.001
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
2
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR
I
C
/I
B
4
= 10
Figure 34. Output Capacitance
V
6
R
Figure 32. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
8
, COLLECTOR CURRENT (mA)
10
15 20
CE(sat)
40
0.1
10
1
0
Figure 36. Input Voltage versus Output Current
25 30
versus I
V
O
= 0.2 V
T
A
f = 1 MHz
l
T
E
35 40
A
10
= -25°C
60
= 0 V
= 25°C
C
75°C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
45 50
20
80
11
T
A
= -25°C
100
30
300
250
200
150
100
50
10
1
0
1
0
Figure 35. Output Current versus Input Voltage
V
CE
T
2
A
= 75°C
= 10
40
4
25°C
2
6
Figure 33. DC Current Gain
75°C
I
C
V
8
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
10
4
15 20 40 50 60 70 80 90
-25°C
6
-25°C
25°C
T
A
V
= 75°C
25°C
O
8
= 5 V
100
10