EMA6DXV5T1G ON Semiconductor, EMA6DXV5T1G Datasheet - Page 4

• Manufacturer Part Number: EMA6DXV5T1G
• Description: TRANS BR DUAL COMMON EMIT SOT553
• Manufacturer: ON Semiconductor

Specifications of EMA6DXV5T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: EMA6DXV5T1GOSTR

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5
1
G
−X−
A
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
2
4
3
D
0.08 (0.003)
−Y−
5 PL
B
M
EMA6DXV5T1, EMA6DXV5T5
X
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
Y
PACKAGE DIMENSIONS
5−LEAD PACKAGE
http://onsemi.com
C
CASE 463B−01
XV5 SUFFIX
SOT−553
ISSUE O
S
J
K
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
B
C
D
G
J
K
S
MILLIMETERS
MIN
1.50
1.10
0.50
0.17
0.08
0.10
1.50
0.50 BSC
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MAX
1.70
1.30
0.60
0.27
0.18
0.30
1.70
0.059
0.043
0.020
0.007
0.003
0.004
0.059
MIN
0.020 BSC
INCHES
0.067
0.051
0.024
0.007
0.012
0.067
MAX
0.011
EMA6DXV5T1/D