EMG1T2R Rohm Semiconductor, EMG1T2R Datasheet - Page 2

TRANS DUAL NPN 50V 30MA EMT5

EMG1T2R

Manufacturer Part Number
EMG1T2R
Description
TRANS DUAL NPN 50V 30MA EMT5
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of EMG1T2R

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMG1T2RTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMG1T2R
Manufacturer:
ROHM
Quantity:
8 000
Transistors
∗ Characteristics of built-in transistor
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Electrical characteristics (Ta = 25°C)
Electrical characteristics curves
Fig.1 Input voltage vs. output current
500m
200m
100m
500m
200m
100m
50m
20m
10m
100
5m
2m
1m
50
20
10
100µ 200µ 500µ 1m
100µ 200µ
5
2
1
1
Fig.4 Output voltage vs. output
(ON characteristics)
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
Ta=−40°C
500µ 1m
Parameter
100°C
25°C
Ta=100°C
2m
2m
−40°C
25°C
5m 10m 20m 50m 100m
5m 10m 20m 50m 100m
O
O
(A)
(A)
V
l
O
O
/l
=0.2V
I
=20
Symbol
R
V
V
V
I
O (off)
2
O (on)
R
I (off)
I (on)
G
f
Fig.2 Output current vs. input voltage
I
/ R
T
I
1
I
500µ
200µ
100µ
10m
5m
2m
1m
50µ
20µ
10µ
1
0
V
Ta=100°C
(OFF characteristics)
CC
=5V
−40°C
0.5
25°C
INPUT VOLTAGE : V
Min.
15.4
0.8
56
3
1.0
Typ.
1.5
250
0.1
22
1
2.0
I(off)
Max.
0.36
28.6
(V)
0.5
0.3
0.5
1.2
2.5
EMG1 / UMG1N / FMG1A
3.0
MHz
Unit
mA
µA
kΩ
V
V
500
200
100
V
V
I
V
V
V
V
50
20
10
1k
O
5
2
1
CC
O
I
CC
O
CE
=10mA, I
100µ 200µ
=5V
Fig.3 DC current gain vs. output
=0.2V, I
=5V, I
=5V, I
=50V, V
=10V, I
O
O
=5mA
OUTPUT CURRENT : I
current
O
=100µA
I
E
=0.5mA
=5mA
500µ 1m
I
= −5mA , f=100MHz
Ta=100°C
=0V
Conditions
−40°C
25°C
Rev.A
2m
5m 10m 20m 50m 100m
O
(A)
V
O
=5V
2/2

Related parts for EMG1T2R