UMB11NTN Rohm Semiconductor, UMB11NTN Datasheet
UMB11NTN
Manufacturer Part Number
UMB11NTN
Description
TRANS DUAL PNP 50V 50MA SOT363
Manufacturer
Rohm Semiconductor
Datasheet
1.IMB11AT110.pdf
(3 pages)
Specifications of UMB11NTN
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
-100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
30
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMB11NTNTR
Available stocks
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Transistors
General purpose
(dual digital transistors)
EMB11 / UMB11N / IMB11A
1) Two DTA114E chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
DTr
∗
∗
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
package.
automatic mounting machines.
interference.
EMB11 / UMB11N
2
.
R
R
1
2
=10kΩ
=10kΩ
Parameter
EMB11, UMB11N
IMB11A
DTr
2
(3)
(4)
R
R
2
1
(2)
(5)
R
R
1
2
DTr
(1)
(6)
1
Symbol
I
C (Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
IMB11A
DTr
2
150 (TOTAL)
300 (TOTAL)
−55 to +150
(4)
(3)
R
R
2
1
Limits
−100
−50
−40
−50
150
10
(5)
R
(2)
R
1
2
DTr
(6)
(1)
1
R
R
1
2
=10kΩ
=10kΩ
1
and
Unit
mW
mA
˚C
˚C
V
V
∗ 1
∗ 2
External dimensions (Unit : mm)
EMB11
ROHM : EMT6
UMB11N
ROHM : UMT6
EIAJ : SC-88
IMB11A
ROHM : SMT6
EIAJ : SC-74
EMB11 / UMB11N / IMB11A
0.3to0.6
Abbreviated symbol : B11
0.1Min.
Abbreviated symbol : B11
Abbreviated symbol : B11
( 4 )
( 5 )
( 6 )
1.6
2.8
1.25
1.2
1.6
2.1
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Rev.A
1/2
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UMB11NTN Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol Min (off) Input voltage −3 (on) Output voltage V O (on) I Input current I Output current I O (off) DC current gain Transition ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...