UMB4NTN Rohm Semiconductor, UMB4NTN Datasheet
UMB4NTN
Manufacturer Part Number
UMB4NTN
Description
TRANS DUAL PNP 50V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMB4NTN.pdf
(2 pages)
Specifications of UMB4NTN
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Other names
UMB4NTN
UMB4NTNTR
UMB4NTNTR
Transistors
General purpose (dual digital transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A
! ! ! ! Feature
1) Two DTA114T chips in a EMT or UMT or SMT package.
! ! ! ! Equivalent circuits
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Electrical characteristics (Ta=25°C)
! ! ! ! Package, marking, and packaging specifications
∗Transition frequency of the device.
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Collector-emitter breakdown voltage
Transition frequency
Basic ordering unit (pieces)
EMA4 / UMA4N
R
(4)
1
(3)
(2)
Package
Marking
Code
Type
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
FMA4A / IMB4A
(1)
(5)/(6)
R
Parameter
1
Parameter
FMA4A
R
(2)
1
(3)
EMA4
EMT5
8000
T2R
A4
(4)
(5)
UMA4N
R
(1)
UMT5
3000
1
TR
A4
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
1
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
Symbol
EMB4
V
V
V
EMT6
Tstg
8000
T2R
EMB4 / UMB4N
(3)
(4)
Pd
Tj
CBO
CEO
EBO
I
B4
C
R
1
(2)
(5)
R
1
150(TOTAL)
300(TOTAL)
Min.
−50
−50
100
−5
−55 ~ +150
UMB4N
−
−
−
−
7
(1)
(6)
UMT6
3000
Limits
−100
TN
B4
150
−50
−50
−5
Typ.
250
250
10
−
−
−
−
−
−
UMB8N
UMT6
3000
B8
TR
IMB4A
(3)
(4)
Unit
mW
mA
°C
°C
V
V
V
R
Max.
−0.5
−0.5
−0.3
600
13
1
(2)
−
−
−
−
(5)
∗1
∗2
R
FMA4A
1
SMT5
T148
3000
A4
(6)
(1)
MHz
Unit
µA
µA
kΩ
V
V
V
V
−
IMB4A
SMT6
T110
3000
B4
I
I
I
V
V
I
V
V
C
C
E
C
UMB8N
R
CB
EB
CE
CE
=−50µA
=−1mA
=−50µA
/I
1
B
(3)
=−50V
=−4V
=−5V, I
=−10V, I
=−10mA/−1mA
(4) (5)
(2)
C
FMA4A / IMB4A
=−1mA
E
R
Conditions
=5mA, f=100MHz
1
(6)
(1)
−
∗
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UMB4NTN Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A ! ! ! ! Feature 1) Two DTA114T chips in a EMT or UMT or SMT package ...
Page 2
Transistors ! ! ! ! External dimensions (Units : mm) EMA4 ( 1.2 1.6 ROHM : EMT5 Each lead has same dimensions EMB4 ( 4 ) ...