UMH10NTN Rohm Semiconductor, UMH10NTN Datasheet

TRANS DUAL NPN 50V 100MA SOT-363

UMH10NTN

Manufacturer Part Number
UMH10NTN
Description
TRANS DUAL NPN 50V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMH10NTN

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMH10NTNTR

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Transistors
General purpose (dual digital transistors)
EMH10 / UMH10N / IMH10A
1) Two DTC123J chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
Type
EMH10
UMH10N
IMH10A
EMH10 / UMH10N
Features
Structure
Equivalent circuit
Packaging specifications
package.
automatic mounting machines.
interference.
DTr
2
R
R
(3)
(4)
1
2
R
=2.2k
=47k
R
2
1
(2)
R
(5)
Package
Code
Basic ordering unit (pieces)
R
1
2
DTr
(1)
(6)
1
DTr
IMH10A
2
(4)
R
R
(3)
R
R
1
2
=2.2k
=47k
2
1
(5)
R
(2)
R
1
2
DTr
(6)
(1)
1
8000
T2R
Taping
3000
TN
1
and DTr
T110
3000
2
.
External dimensions (Units : mm)
EMH10
UMH10N
ROHM : EMT6
ROHM : UMT6
EIAJ : SC-88
IMH10A
ROHM : SMT6
EIAJ : SC-74
EMH10 / UMH10N / IMH10A
Abbreviated symbol : H10
Abbreviated symbol : H10
0.3to0.6
Abbreviated symbol : H10
0.1Min.
( 4 )
( 5 )
( 6 )
1.25
1.2
1.6
1.6
2.8
2.1
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Each lead has same dimensions

Related parts for UMH10NTN

UMH10NTN Summary of contents

Page 1

Transistors General purpose (dual digital transistors) EMH10 / UMH10N / IMH10A Features 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...

Page 2

Transistors Absolute maximum ratings (Ta=25 C) Parameter Symbol Supply voltage Input voltage Output current I C (Max.) EMH10,UMH10N Power dissipation IMH10A Storage temperature Tstg 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. ...

Page 3

Transistors = 500m Ta=100 C 200m 25 C 100m 40 C 50m 20m 10m 100 200 500 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.4 Output ...

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