XP0331200L Panasonic - SSG, XP0331200L Datasheet - Page 2

• Manufacturer Part Number: XP0331200L
• Description: TRANS ARRAY NPN/PNP W/RES SMINI5
• Manufacturer: Panasonic - SSG

Specifications of XP0331200L

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz, 80MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: S-Mini 5P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: XP0331200LTR

XP03312
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
• Tr1
• Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Common characteristics chart
250
200
150
100
50
0
0
Ambient temperature T
40
Parameter
Parameter
P
T
 T
80
a
This product complies with the RoHS Directive (EU 2002/95/EC).
120
a
( °C )
160
a
= 25°C ± 3°C
Symbol
Symbol
V
R
V
R
V
V
V
V
I
I
I
V
I
I
I
V
V
V
1
1
CE(sat)
CE(sat)
h
h
CBO
CBO
CEO
EBO
R
CEO
EBO
R
f
f
CBO
CEO
CBO
CEO
FE
OH
OL
/ R
FE
OH
OL
/ R
T
T
1
1
2
2
I
I
V
V
V
V
I
V
V
V
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
CB
CE
EB
CE
CC
CC
CB
CB
CE
EB
CE
CC
CC
CB
= 10 µA, I
= 2 mA, I
= 10 mA, I
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00158CED
= 50 V, I
= 6 V, I
= 10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
B
C
E
Conditions
Conditions
B
B
B
B
C
B
E
E
C
= 0
= 0
E
= 0
B
B
B
B
C
E
E
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
L
L
= 1 kΩ
= 1 kΩ
−30%
−30%
−4.9
Min
Min
−50
−50
4.9
0.8
0.8
50
50
60
60
Typ
150
Typ
1.0
1.0
22
22
80
− 0.25
+30%
+30%
− 0.1
− 0.5
− 0.2
− 0.2
Max
Max
0.25
0.1
0.5
0.2
0.2
1.2
1.2
MHz
MHz
Unit
Unit
mA
mA
µA
µA
µA
µA
kΩ
kΩ




V
V
V
V
V
V
V
V
V
V