NST3906DXV6T1G ON Semiconductor, NST3906DXV6T1G Datasheet - Page 5

• Manufacturer Part Number: NST3906DXV6T1G
• Description: TRANS PNP DUAL 200MA 40V SOT563
• Manufacturer: ON Semiconductor

Specifications of NST3906DXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST3906DXV6T1GOS; NST3906DXV6T1GOS; NST3906DXV6T1GOSTR

2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
I
C
T
= 1.0 mA
J
= 25 C
2.0
0.2
0.02
5.0
Figure 14. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.3
0.03
10
0.5
V
0.05
20
BE(sat)
V
CE(sat)
0.7
@ I
0.07
@ I
NST3906DXV6T1, NST3906DXV6T5
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
V
C
B
BE
/I
50
Figure 13. Collector Saturation Region
= 10
10 mA
T
B
0.1
J
@ V
= 10
= +125 C
CE
Figure 12. DC Current Gain
100
= 1.0 V
2.0
+25 C
−55 C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
5
0.3
5.0
30 mA
−0.5
−1.0
−1.5
−2.0
1.0
0.5
0
7.0
0.5
0
q
VC
10
20
0.7
FOR V
Figure 15. Temperature Coefficients
q
VB
40
CE(sat)
1.0
FOR V
I
C
20
, COLLECTOR CURRENT (mA)
60
BE(sat)
30
80
2.0
100
+25 C TO +125 C
50
−55 C TO +25 C
3.0
120
70
+25 C TO +125 C
100 mA
−55 C TO +25 C
140
V
5.0
100
CE
T
160
= 1.0 V
J
= 25 C
7.0
180
200
10
200