NST3904DXV6T5G ON Semiconductor, NST3904DXV6T5G Datasheet - Page 3

• Manufacturer Part Number: NST3904DXV6T5G
• Description: TRANS NPN DUAL 200MA 40V SOT563
• Manufacturer: ON Semiconductor

Specifications of NST3904DXV6T5G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST3904DXV6T5GOS; NST3904DXV6T5GOS; NST3904DXV6T5GOSTR

500
300
200
100
500
300
200
100
30
20
10
70
50
30
20
10
70
50
7
5
7
5
1.0
1.0
I
C
/I
B
= 20
2.0 3.0
2.0 3.0
I
I
Figure 4. Turn-On Time
I
C
C
C
Figure 6. Storage Time
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
B
= 10
10
10
t
d
@ V
7.0
5.0
3.0
2.0
1.0
10
0.1
20
20
OB
TYPICAL TRANSIENT CHARACTERISTICS
= 0 V
NST3904DXV6T1, NST3904DXV6T5
30
30
0.2 0.3 0.5 0.7
t
50
50
r
I
C
@ V
/I
B
t′
I
70
B1
70
s
REVERSE BIAS VOLTAGE (VOLTS)
= 20
I
I
CC
C
C
= t
= I
/I
Figure 3. Capacitance
/I
100
100
2.0 V
B
B
s
= 3.0 V
B2
-
= 10
http://onsemi.com
= 10
15 V
40 V
1
/
8
1.0
t
f
200
200
C
ibo
C
2.0 3.0 5.0 7.0 10
3
obo
T
T
J
J
= 25°C
= 125°C
500
300
200
100
500
300
200
100
30
20
10
30
20
10
70
50
70
50
7
5
7
5
1.0
1.0
2.0 3.0
2.0 3.0
20 30 40
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
I
Figure 5. Rise Time
C
Figure 7. Fall Time
/I
B
= 10
10
10
I
C
/I
B
20
20
= 20
30
30
50
50
V
I
V
I
70
70
B1
C
CC
CC
/I
B
= I
100
100
= 40 V
= 40 V
= 10
B2
200
200