BC858CDXV6T1G ON Semiconductor, BC858CDXV6T1G Datasheet - Page 2

• Manufacturer Part Number: BC858CDXV6T1G
• Description: TRANS PNP DUAL 30V 100MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of BC858CDXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
f = 1.0 kHz, BW = 200 Hz)
C
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
= −1.0 mA)
= −10 mA)
= −10 mA, V
= −10 mA)
= −10 mA, V
= −2.0 mA, V
= −10 mA, I
= −100 mA, I
= −10 mA, I
= −100 mA, I
= −2.0 mA, V
= −10 mA, V
= −10 mA, V
= −0.2 mA, V
= −10 V, f = 1.0 MHz)
B
B
EB
CE
CE
CE
B
B
CE
CE
CE
= −0.5 mA)
= −0.5 mA)
= −5.0 mA)
= −5.0 mA)
= 0)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, f = 100 MHz)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, R
(V
CB
CB
= −30 V)
= −30 V, T
Characteristic
S
= 2.0 kW,
A
(T
= 150°C)
BC858CDXV6T1, BC858CDXV6T5
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(BR)CES
I
CE(sat)
BE(sat)
BE(on)
h
C
CBO
NF
f
FE
T
ob
−5.0
−0.6
Min
−30
−30
−30
420
100
−
−
−
−
−
−
−
−
−
−
−0.7
−0.9
Typ
270
520
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.65
−0.75
−0.82
Max
−4.0
−0.3
−15
800
4.5
10
−
−
−
−
−
−
−
−
MHz
Unit
nA
dB
mA
pF
V
V
V
V
V
V
V
−