ZXT12P12DXTC Diodes Zetex, ZXT12P12DXTC Datasheet - Page 2

• Manufacturer Part Number: ZXT12P12DXTC
• Description: TRANSISTOR PNP DUAL 12V 8MSOP
• Manufacturer: Diodes Zetex

Specifications of ZXT12P12DXTC

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 270mV @ 30mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.04W
• Frequency - Transition: 85MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MARCH 2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
V
V
V
I
I
I
P
P
P
T
CM
C
B
D
D
D
j
CBO
CEO
EBO
:T
2
stg
SYMBOL
R
R
R
JA
JA
JA
-55 to +150
LIMIT
-500
0.87
1.04
1.25
-7.5
-20
-12
-15
6.9
8.3
10
-3
VALUE
ZXT12P12DX
143
100
120
mW/°C
mW/°C
mW/°C
UNIT
mA
°C
W
W
W
V
V
V
A
A
UNIT
°C/W
°C/W
°C/W