MMDT4124-7 Diodes Inc, MMDT4124-7 Datasheet
MMDT4124-7
Manufacturer Part Number
MMDT4124-7
Description
TRANSISTOR DUAL NPN 25V SOT-363
Manufacturer
Diodes Inc
Datasheet
1.MMDT4124-7-F.pdf
(3 pages)
Specifications of MMDT4124-7
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
200mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Dc
04+
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMDT4124DITR
MMDT4124TR
MMDT4124TR
MMDT4124TR
MMDT4124TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMDT4124-7-F
Manufacturer:
DIODES
Quantity:
9 000
Company:
Part Number:
MMDT4124-7-F
Manufacturer:
DIODES
Quantity:
3 049
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Features
•
•
•
•
•
•
•
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
MMDT4124
Document number: DS30164 Rev. 10 - 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMDT4126)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 5 and 6)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
(Notes 1 & 2)
Top View
(Note 1)
(Note 1)
www.diodes.com
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
C
h
CBO
EBO
NF
1 of 3
h
f
obo
FE
ibo
fe
T
Mechanical Data
•
•
•
•
•
•
•
•
T
Symbol
Symbol
J
V
V
V
R
, T
P
CBO
CEO
EBO
I
θ JA
Please click here to visit our online spice models database.
C
D
Min
120
120
300
5.0
STG
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
30
25
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Device Schematic
C
E
2
2
B
B
Max
0.30
0.95
1
2
360
480
4.0
8.0
5.0
50
50
⎯
⎯
⎯
⎯
⎯
E
C
1
1
Unit
MHz
-55 to +150
nA
nA
dB
pF
pF
⎯
⎯
V
V
V
V
V
Value
Value
200
200
625
5.0
30
25
I
I
I
V
V
I
I
I
I
V
V
V
V
V
R
C
C
E
C
C
C
C
CB
EB
CB
EB
CE
CE
CE
S
= 10μA, I
= 10μA, I
= 1.0mA, I
= 2.0mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= 1.0kΩ, f = 1.0kHz
= 20V, I
= 3.0V, I
= 1.0V, I
= 5.0V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
Test Condition
C
E
E
B
B
C
C
B
C
C
= 0
= 0
CE
CE
= 0V
= 5.0mA
= 5.0mA
= 10mA, f = 100MHz
= 0
= 0V
= 2.0mA, f = 1.0kHz
= 100μA,
= 1.0V
= 1.0V
MMDT4124
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
V
V
V
January 2009
C
E
= 0
= 0
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MMDT4124-7 Summary of contents
Page 1
... V (BR)EBO ⎯ I CBO ⎯ I EBO 120 ⎯ V CE(SAT) ⎯ V BE(SAT) ⎯ C obo ⎯ C ibo h 120 fe 300 f T ⎯ www.diodes.com MMDT4124 Value Unit 5.0 V 200 mA Value Unit 200 mW °C/W 625 °C -55 to +150 Max Unit Test Condition ⎯ 10μ ⎯ ...
Page 2
... Fig. 2 Typical DC Current Gain vs. Collector Current 10 1 0.1 1,000 100 0 1MHz C ibo C obo 10 100 www.diodes.com MMDT4124 1 10 100 I , COLLECTOR CURRENT (mA 100 I , COLLECTOR CURRENT (mA) C Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current January 2009 © Diodes Incorporated 1,000 1,000 ...
Page 3
... Ordering Information (Note 5) Part Number MMDT4124-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Code Month Jan ...