EMX18T2R Rohm Semiconductor, EMX18T2R Datasheet - Page 3

• Manufacturer Part Number: EMX18T2R
• Description: TRANS COMPLEX DUAL NPN 12V EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMX18T2R

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 200mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 10mA, 2V
• Power - Max: 150mW
• Frequency - Transition: 320MHz
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: EMX18T2R; EMX18T2RTR

Transistors
Fig.4 Collector-emitter saturation voltage
1000
500
200
100
50
20
10
5
2
1
1000
1
500
200
100
50
20
10
5
2
1
0.1
I
C
Fig.7 Collector output capacitance
/I
2
B
COLLECTOR CURRENT : I
EMITTER TO BASE VOLTAGE : V
10
0.2
= 50
20
vs. collector current ( ΙΙ )
5
Emitter input capacitance
0.5
10 20
vs collector-base voltage
vs emitter-base voltage
1
2
50 100 200
5
Cib
Cob
10
Ta = 25°C
C
(mA)
20
Ta = 25°C
I
f = 1MHz
500 1000
E
= 0A
EB
50 100
(V)
10000
5000
2000
1000
500
200
100
Fig.5 Base-emitter saturation voltage
50
20
10
1
2
COLLECTOR CURRENT : I
5
vs. collector current
10 20
Ta = -40°C
125°C
25°C
50 100 200
I
C
C
/I
(mA)
B
= 20
500 1000
1000
500
200
100
50
20
10
Fig.6
5
2
1
1
COLLECTOR TO BASE VOLTAGE : V
Ta = 25°C
V
Pulsed
EMX18 / UMX18N
CE
2
= 2V
Collector output capacitance
5
Emitter input capacitance
vs. base voltage
10
Rev.A
20
50 100 200
500 1000
CB
3/3
(V)